TIP115

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TIP115 - Stmicroelectronics
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Краткое описание: PNP Darlington Transistor 60V 2A 2W TO-220
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Darlington bipolar junction transistor (BJT) featuring a 60V collector-emitter breakdown voltage and a 2A maximum collector current. This component offers a high minimum DC current gain (hFE) of 1000 and a maximum power dissipation of 2W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -65°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
hFE Min 1000
Polarity PNP
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220
Current Rating -2A
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 50
Power Dissipation 2W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 2A
Max Power Dissipation 2W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 2.5V

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