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Краткое описание:
PNP BJT 100V 2A TO-220 Darlington Transistor
Дополнительная информация
PNP bipolar junction transistor (BJT) in a TO-220 package, designed for through-hole mounting. Features a collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 2A. Offers a minimum DC current gain (hFE) of 1000 and a maximum collector-emitter saturation voltage (VCE(sat)) of 2.5V. Operates within a temperature range of -65°C to 150°C with a power dissipation of 50W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| hFE Min | 1000 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220 |
| Current Rating | -2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 1000 |
| Power Dissipation | 50W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 2A |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 2.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2.5V |
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