TIP117G

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TIP117G - Stmicroelectronics
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Краткое описание: PNP Darlington Transistor, 100V, 2A, 2000mW, TO-220
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

PNP Darlington transistor featuring 100V collector-emitter voltage and 2A continuous collector current. This single-element BJT offers a maximum power dissipation of 2000mW and a low collector-emitter saturation voltage of 2.5V at 8mA/2A. Housed in a TO-220 package with 3 pins and a tab, it supports through-hole mounting. Operating temperature range spans from -65°C to 150°C, with a high DC current gain of 1000 at 1A/4V.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type PNP
Jedec TO-220AB
EU RoHS Yes with Exemption
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case TO-220
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.7(Max)
Package Material Plastic
Basic Package Type Through Hole
Package Weight (g) 1.9
Package Width (mm) 4.6(Max)
Package Description Transistor Outline Package
Package Family Name TO-220
Package Height (mm) 9.15(Max)
Package Length (mm) 10.4(Max)
Radiation Hardening No
Minimum DC Current Gain 1000@1A@4V|500@2A@4V
Seated Plane Height (mm) 19.68(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 2000mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum Emitter Base Voltage 5V
Maximum Collector Base Voltage 100V
Maximum Collector-Emitter Voltage 100V
Maximum Continuous DC Collector Current 2A
Maximum Collector-Emitter Saturation Voltage 2.5@8mA@2AV

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