TIP132

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TIP132 - Stmicroelectronics
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Краткое описание: NPN BJT 100V 8A TO-220 Darlington Transistor
Производитель Stmicroelectronics
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

NPN bipolar junction transistor featuring a 100V collector-emitter breakdown voltage and 8A continuous collector current. This through-hole component offers a high DC current gain (hFE) of 500 minimum and a low collector-emitter saturation voltage of 2V. Packaged in a TO-220 case, it operates across a wide temperature range from -65°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
Weight 0.211644oz
hFE Min 500
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220
Current Rating 8A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 1000
Power Dissipation 2W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 8A
Max Power Dissipation 2W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 4V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V

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