TIP135

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TIP135 - Stmicroelectronics
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Краткое описание: PNP BJT Transistor 60V 8A TO-220
Производитель Stmicroelectronics
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a TO-220 package. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 8A. Offers a minimum DC current gain (hFE) of 500 and a low collector-emitter saturation voltage of 2V. Designed for through-hole mounting with a maximum power dissipation of 2W. Operates across a wide temperature range from -65°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
hFE Min 500
Polarity PNP
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220
Current Rating -8A
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 50
Power Dissipation 2W
Number of Elements 1
Reach SVHC Compliant No
Max Collector Current 8A
Max Power Dissipation 2W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 4V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 2V

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