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PNP Darlington Transistor, 100V, 10A, 1000hFE, TO-220AB
Дополнительная информация
PNP Epitaxial Silicon Darlington Transistor, TO-220AB package, offering a maximum collector current of 10A and a continuous collector current of -2A. Features a collector-emitter breakdown voltage of 100V, a collector-base voltage of -100V, and a minimum hFE of 1000. This through-hole mount component operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 80W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.4mm |
| Length | 10.67mm |
| Weight | 1.214g |
| hFE Min | 1000 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220AB |
| Current Rating | -2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 50 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 10A |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -100V |
| Collector-emitter Voltage-Max | 3V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
