TIP29

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TIP29 - Onsemi
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Краткое описание: NPN BJT Transistor 40V 1A TO-220
Производитель Onsemi
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 60V, with a DC rated voltage of 40V. Offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 2W. This RoHS compliant component is packaged in bulk.
RoHS Compliant
Mount Through Hole
Weight 1.214g
hFE Min 15
Polarity NPN
Frequency 3MHz
Lead Free Lead Free
Packaging Bulk
Package/Case TO-220-3
Current Rating 1A
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 200
Power Dissipation 2W
Number of Elements 1
Transition Frequency 3MHz
Max Breakdown Voltage 40V
Max Collector Current 1A
Max Power Dissipation 2W
Gain Bandwidth Product 3MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 700mV

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