TIP2955

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TIP2955 - Stmicroelectronics
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Краткое описание: PNP BJT Transistor, 60V VCEO, 15A IC, 90W PD, TO-247
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a TO-247 package. Features a collector-emitter breakdown voltage of 60V, a maximum collector current of 15A, and a maximum power dissipation of 90W. Offers a minimum DC current gain (hFE) of 20 and a gain bandwidth product of 3MHz. Designed for through-hole mounting and operates within a temperature range of -65°C to 150°C. RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
hFE Min 20
Polarity PNP
Frequency 3MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-247
Max Frequency 2.5MHz
Current Rating -15A
RoHS Compliant Yes
DC Rated Voltage -100V
Package Quantity 30
Power Dissipation 90W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 15A
Max Power Dissipation 90W
Gain Bandwidth Product 3MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 3V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1V

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