TIP29ATU

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TIP29ATU - Onsemi
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Краткое описание: NPN BJT Transistor 60V 1A TO-220
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN bipolar junction transistor (BJT) in a TO-220 package, designed for through-hole mounting. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C with a power dissipation of 2W. This component is lead-free and RoHS compliant.
RoHS Compliant
Mount Through Hole
hFE Min 15
Polarity NPN
Frequency 3MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Current Rating 1A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 50
Power Dissipation 2W
Number of Elements 1
Transition Frequency 3MHz
Max Collector Current 1A
Max Power Dissipation 2W
Gain Bandwidth Product 3MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V

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