TIP29BG

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TIP29BG - Onsemi
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Краткое описание: 80V 1A NPN BJT Power Transistor TO-220
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar power transistor featuring 80V collector-emitter breakdown voltage and 1A continuous collector current. This TO-220 package component offers a maximum power dissipation of 2W and a transition frequency of 3MHz. Key specifications include a minimum hFE of 40 and a collector-emitter saturation voltage of 700mV. Packaged in a 50-piece tube, this RoHS compliant device operates within a temperature range of -65°C to 150°C.
RoHS Compliant
hFE Min 40
Polarity NPN
Frequency 3MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Max Frequency 3MHz
Current Rating 1A
RoHS Compliant Yes
DC Rated Voltage 80V
Package Quantity 50
Power Dissipation 2W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 3MHz
Max Collector Current 1A
Max Power Dissipation 2W
Gain Bandwidth Product 3MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 700mV

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