TIP31C
Производится
Увеличить
Краткое описание:
NPN BJT Transistor 100V 3A TO-220 Power 2W
Дополнительная информация
NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 100V collector-emitter breakdown voltage and a 3A continuous collector current rating. Maximum power dissipation is 2W, with a low collector-emitter saturation voltage of 1.2V. Housed in a TO-220 package with through-hole mounting. Operating temperature range spans from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| hFE Min | 10 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220 |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1000 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 3A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
