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Краткое описание:
10A 100V NPN Si Power Transistor TO-247
Дополнительная информация
NPN Silicon Power Transistor, TO-247 package, offering a 10A continuous collector current and 100V collector-emitter breakdown voltage. Features a maximum power dissipation of 80W and a transition frequency of 3MHz. Collector-emitter saturation voltage is 1V, with a minimum DC current gain (hFE) of 20. Operating temperature range spans from -65°C to 150°C. Through-hole mount design, RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| hFE Min | 20 |
| Polarity | NPN |
| Frequency | 3MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-247 |
| Max Frequency | 3MHz |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 140V |
| Package Quantity | 300 |
| Power Dissipation | 80W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 3MHz |
| Max Collector Current | 10A |
| Max Power Dissipation | 80W |
| Gain Bandwidth Product | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 140V |
| Collector-emitter Voltage-Max | 4V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1V |
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