TIP33CG

Производится
TIP33CG - Onsemi
Увеличить
Краткое описание: NPN Power Transistor 100V 10A 80W TO-247 BJT
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

High power NPN bipolar junction transistor in a TO-247-3 package. Features a maximum collector current of 10A and a collector-emitter voltage of 100V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. With a maximum power dissipation of 80W, this transistor operates within a temperature range of -65°C to 150°C and is RoHS compliant. Packaged in a 30-unit rail/tube.
RoHS Compliant
hFE Min 40
Polarity NPN
Frequency 3MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-247-3
Max Frequency 3MHz
Current Rating 10A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 30
Power Dissipation 80W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 3MHz
Max Collector Current 10A
Max Power Dissipation 80W
Gain Bandwidth Product 3MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 4V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 1V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.