TIP41C

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TIP41C - Stmicroelectronics
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Краткое описание: NPN BJT Transistor 100V 6A 65W TO-220
Производитель Stmicroelectronics
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

NPN bipolar junction transistor (BJT) with a maximum collector current of 6A and a maximum power dissipation of 65W. Features a collector-emitter voltage (VCEO) of 100V and a collector-base voltage (VCBO) of 100V. This through-hole component is housed in a TO-220 package, offering a minimum hFE of 15 and a maximum collector-emitter saturation voltage of 1.5V. Operating temperature range spans from -65°C to 150°C, with RoHS compliance.
ECCN EAR99
RoHS ROHS3 Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
hFE Min 15
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220
Reach Status REACH Unaffected
Current Rating 6A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 50
Power Dissipation 65W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 6A
Max Power Dissipation 65W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 1.5V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 1.5V

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