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PNP BJT Transistor, 100V, 6A, 3MHz, TO-220
Дополнительная информация
PNP Epitaxial Silicon Transistor, TO-220-3 package. Features a collector-emitter voltage of 100V, a continuous collector current of 6A, and a transition frequency of 3MHz. Offers a minimum DC current gain (hFE) of 15 and a maximum power dissipation of 2W. Operates within a temperature range of -65°C to 150°C. Through-hole mount, lead-free, and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 16.51mm |
| Length | 10.67mm |
| Weight | 1.214g |
| hFE Min | 15 |
| Polarity | PNP |
| Frequency | 3MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220-3 |
| Max Frequency | 3MHz |
| Current Rating | -6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 50 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 3MHz |
| Max Collector Current | 6A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -100V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -1.5V |
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