TPCP8511

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TPCP8511 - Toshiba
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Краткое описание: NPN BJT 50V 3A SMT PS 8-Pin
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 50V and a maximum DC collector current of 3A. This single-element transistor is housed in an 8-pin PS package with flat leads, measuring 2.9mm in length, 2.4mm in width, and 0.8mm in height, with a 0.65mm pin pitch. Maximum power dissipation is 1250mW, and it operates within a temperature range of -55°C to 150°C. Minimum DC current gain is 250 at 0.3A/2V and 120 at 1A/2V.
PCB 8
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Category Bipolar Power
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape Flat
Schedule B 8541290080
Package/Case PS
AEC Qualified No
Configuration Single Hex Collector
RoHS Versions 2011/65/EU
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 2.4
Package Family Name PS
Package Height (mm) 0.8
Package Length (mm) 2.9
Minimum DC Current Gain [email protected]@2V|120@1A@2V
Seated Plane Height (mm) 0.8
Max Operating Temperature 150°C
Maximum Power Dissipation 1250mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 3A
Maximum Emitter Base Voltage 6V
Maximum Collector Base Voltage 100V
Maximum Collector-Emitter Voltage 50V

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