TPCP8701(TE85L,F,M

Не рекомендуется для новых проектов
TPCP8701(TE85L,F,M - Toshiba
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Краткое описание: NPN BJT Dual Collector 50V 3A 8-Pin SMT
Производитель Toshiba
Статус производства Не рекомендуется для новых проектов (LTB)

Дополнительная информация

NPN Bipolar Junction Transistor, Dual Collector configuration, designed for surface mount applications. Features a 50V collector-emitter voltage, 3A maximum DC collector current, and 1770mW power dissipation. This silicon transistor offers a minimum DC current gain of 200 at 1A/2V. Housed in an 8-pin PS lead-frame SMT package with flat leads, measuring 2.9mm x 2.4mm x 0.8mm.
PCB 8
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Category Bipolar Power
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 8
Automotive No
Lead Shape Flat
Schedule B 8541290080
Package/Case PS
AEC Qualified No
Configuration Dual Dual Collector
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 2.4
Package Family Name PS
Package Height (mm) 0.8
Package Length (mm) 2.9
Radiation Hardening No
Minimum DC Current Gain 200@1A@2V|[email protected]@2V
Seated Plane Height (mm) 0.8
Max Operating Temperature 150°C
Maximum Power Dissipation 1770mW
Number of Elements per Chip 2
Maximum DC Collector Current 3A
Maximum Emitter Base Voltage 7V
Maximum Collector Base Voltage 100V
Maximum Collector-Emitter Voltage 50V

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