TPS1101D
Производится
Увеличить
Краткое описание:
P-Channel JFET, 15V, 2.3A, 90mR, SOIC
Дополнительная информация
Single P-channel enhancement-mode MOSFET, surface mountable in an 8-SOIC package. Features a continuous drain current of 2.3A and a drain-to-source breakdown voltage of 15V. Offers a low on-resistance (Rds On Max) of 90mR. Operates within a temperature range of -40°C to 125°C, with a maximum power dissipation of 791mW. Includes fast switching characteristics with a fall time of 5.5ns and turn-off delay time of 19ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 5.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 90mR |
| Nominal Vgs | -1.25V |
| Package/Case | SOIC |
| Current Rating | -2.3A |
| Output Current | 2.3A |
| Output Voltage | -15V |
| RoHS Compliant | Yes |
| DC Rated Voltage | -15V |
| Package Quantity | 75 |
| Power Dissipation | 791mW |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 791mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 90mR |
| Gate to Source Voltage (Vgs) | 2V |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | 15V |
| Drain to Source Breakdown Voltage | 15V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
