TSB1386CPR

TSB1386CPR - Taiwan Semiconductor
Краткое описание: PNP BJT Transistor, 20V, 5A, SOT-89, Surface Mount

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 20V collector-emitter voltage and 5A continuous collector current. Housed in a SOT-89 package with 4 pins (3+Tab), offering a maximum power dissipation of 1000mW. Minimum DC current gain is 180 at 0.5A/2V, with a typical transition frequency of 120MHz. Operating temperature range spans from -55°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type PNP
Jedec TO-243AA
EU RoHS Yes
Category Bipolar Power
HTS Code 8541290075
Mounting Surface Mount
Cage Code SDM41
Pin Count 4
Automotive No
Lead Shape Flat
Schedule B 8541290080
Package/Case SOT-89
AEC Qualified No
Configuration Single Dual Collector
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 1.5(Max)
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 2.6(Max)
Package Description Small Outline Transistor
Package Family Name SOT-89
Package Height (mm) 1.6(Max)
Package Length (mm) 4.6(Max)
Radiation Hardening No
Minimum DC Current Gain [email protected]@2V
Seated Plane Height (mm) 1.6(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 5A
Maximum Emitter Base Voltage 6V
Maximum Transition Frequency 120(Typ)MHz
Maximum Collector Base Voltage 30V
Maximum Collector-Emitter Voltage 20V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.