TSB1386CY RM

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TSB1386CY RM - Taiwan Semiconductor
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Краткое описание: PNP BJT Transistor, 20V 5A, SOT-89, 4-Pin
Производитель Taiwan Semiconductor
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 20V collector-emitter voltage and 5A continuous collector current. This single element transistor is housed in a SOT-89 (TO-243AA) plastic package with 4 pins (3+tab) and a maximum package height of 1.6mm. Key specifications include a minimum DC current gain of 180 at 500mA/2V and a typical transition frequency of 120MHz. Operating temperature range is -55°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type PNP
Jedec TO-243AA
EU RoHS Yes
Category Bipolar Power
HTS Code 8541210075
Material Si
Mounting Surface Mount
Cage Code SDM41
Pin Count 4
Automotive No
Lead Shape Flat
Schedule B 8541210080
Package/Case SOT-89
AEC Qualified No
Configuration Single Dual Collector
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 1.5(Max)
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 2.6(Max)
Package Description Small Outline Transistor
Package Family Name SOT-89
Package Height (mm) 1.6(Max)
Package Length (mm) 4.6(Max)
Radiation Hardening No
Minimum DC Current Gain 180@500mA@2V
Seated Plane Height (mm) 1.6(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 500mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 5A
Maximum Emitter Base Voltage 6V
Maximum Transition Frequency 120(Typ)MHz
Maximum Collector Base Voltage 30V
Maximum Collector-Emitter Voltage 20V

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