TSC966CT A3

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TSC966CT A3 - Taiwan Semiconductor
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Краткое описание: NPN BJT 400V 0.3A TO-92 Through Hole Transistor
Производитель Taiwan Semiconductor
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN bipolar junction transistor (BJT) for through-hole mounting. Features a 400V collector-emitter voltage, 0.3A continuous collector current, and 600V collector-base voltage. Housed in a 3-pin TO-92 plastic package with formed leads, offering a maximum power dissipation of 900mW. Operates across a temperature range of -55°C to 150°C, with a minimum DC current gain of 100.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Category Bipolar Power
HTS Code 8541210095
Material Si
Mounting Through Hole
Cage Code SDM41
Pin Count 3
Automotive No
Lead Shape Formed
Schedule B 8541210080
Package/Case TO-92
AEC Qualified No
Configuration Single
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 3.7(Max)
Package Description Plastic Header Style Package
Package Family Name TO-92
Package Height (mm) 4.7(Max)
Package Length (mm) 4.7(Max)
Minimum DC Current Gain 100@1mA@5V|100@20mA@5V
Seated Plane Height (mm) 4.7(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 900mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.3A
Maximum Emitter Base Voltage 7V
Maximum Transition Frequency 50(Min)MHz
Maximum Collector Base Voltage 600V
Maximum Collector-Emitter Voltage 400V

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