TSC966CW RPG

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TSC966CW RPG - Taiwan Semiconductor
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Краткое описание: NPN BJT 400V 0.3A 1000mW SOT-223 Surface Mount Transistor
Производитель Taiwan Semiconductor
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 400V and a continuous collector current of 0.3A, with a maximum power dissipation of 1000mW. Housed in a 4-pin SOT-223 (TO-261AA) plastic package with gull-wing leads. Offers a minimum DC current gain of 100 at 1mA/5V and a minimum transition frequency of 50MHz. Operates across a temperature range of -55°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Jedec TO-261AA
EU RoHS Yes
Category Bipolar Power
HTS Code 8541290075
Material Si
Mounting Surface Mount
Cage Code SDM41
Pin Count 4
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Package/Case SOT-223
AEC Qualified No
Configuration Single Dual Collector
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.35(Max)
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 3.75(Max)
Package Description Small Outline Transistor
Package Family Name SOT-223
Package Height (mm) 1.8(Max)
Package Length (mm) 6.85(Max)
Minimum DC Current Gain 100@1mA@5V|90@20mA@5V
Seated Plane Height (mm) 1.8(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.3A
Maximum Emitter Base Voltage 7V
Maximum Transition Frequency 50(Min)MHz
Maximum Collector Base Voltage 600V
Maximum Collector-Emitter Voltage 400V