TTC005

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TTC005 - Toshiba
Краткое описание: NPN BJT 285V 1A 1100mW SMT PW-Mini
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor for surface mount applications. Features a 285V collector-emitter voltage and 1A maximum DC collector current. Offers 1100mW maximum power dissipation in a compact PW-Mini plastic package with a 4-pin lead-frame SMT configuration. Operating temperature range from -55°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Category Bipolar Power
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 4
Automotive No
Lead Shape Flat
Schedule B 8541290080
Package/Case PW-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU
Pin Pitch (mm) 1.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 2.5
Package Height (mm) 1.6(Max)
Package Length (mm) 4.6(Max)
Minimum DC Current Gain 80@1mA@5V|[email protected]@5V|[email protected]@5V
Seated Plane Height (mm) 1.6(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 1100mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 1A
Maximum Emitter Base Voltage 8V
Maximum Collector Base Voltage 600V
Maximum Collector-Emitter Voltage 285V

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