TTC013

Производится
TTC013 - Toshiba
Краткое описание: NPN BJT 350V 0.5A SMT PW-Mini 4-Pin
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 350V collector-emitter voltage and 0.5A continuous collector current. This single-element silicon transistor offers a maximum power dissipation of 1000mW and operates within a temperature range of -55°C to 150°C. The PW-Mini package is a 4-pin (3+Tab) lead-frame SMT with flat leads and a pin pitch of 1.5mm.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Category Bipolar Power
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 4
Automotive No
Lead Shape Flat
Schedule B 8541290080
Package/Case PW-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU
Pin Pitch (mm) 1.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 2.5
Package Height (mm) 1.6(Max)
Package Length (mm) 4.6(Max)
Minimum DC Current Gain 80@1mA@5V|100@50mA@5V|[email protected]@5V
Seated Plane Height (mm) 1.6(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.5A
Maximum Emitter Base Voltage 7V
Maximum Collector Base Voltage 600V
Maximum Collector-Emitter Voltage 350V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.