ULQ2003ATDRQ1
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Краткое описание:
NPN BJT 50V 500mA 950mW SOIC-8
Дополнительная информация
The ULQ2003ATDRQ1 is a surface-mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It has a maximum power dissipation of 950mW and operates within a temperature range of -40°C to 105°C. The device is lead-free and RoHS compliant, packaged in a tape and reel format with a single SOIC-8 package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 0.004984oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOIC |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 1 |
| Number of Drivers | 7 |
| Number of Elements | 7 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 500mA |
| Max Power Dissipation | 950mW |
| Max Operating Temperature | 105°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.2V |
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