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NPN/PNP BJT Transistor, 50V, 30mA, 250MHz, SOT-363
Дополнительная информация
Dual bipolar junction transistor (BJT) featuring NPN and PNP polarity, designed for small signal applications. This silicon transistor offers a 50V collector-emitter breakdown voltage and a continuous collector current of 30mA. It boasts a minimum hFE of 56 and a transition frequency of 250MHz, packaged in a compact SOT-363 (UMT6) surface-mount case. Rated for 150mW power dissipation, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 56 |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363 |
| Current Rating | 30mA |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 150mW |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 30mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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