SST6838T216
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NPN BJT Transistor, 40V VCEO, 200mA IC, 180MHz, SMT
Дополнительная информация
NPN bipolar junction transistor for small signal applications. Features a 40V collector-emitter breakdown voltage and 200mA continuous collector current. Operates with a maximum power dissipation of 200mW and a transition frequency of 180MHz. Packaged in a TO-236-3 surface mount case, this silicon transistor is RoHS compliant and suitable for a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 200 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | TO-236-3 |
| Current Rating | 200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 10000 |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 180MHz |
| Max Collector Current | 200mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 200mA |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
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