UMT3906T106
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Краткое описание:
PNP BJT Transistor, 40V VCEO, 200mA IC, 250MHz fT, SC-70
Дополнительная информация
PNP silicon bipolar junction transistor for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -200mA. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 250MHz. Packaged in an SC-70 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 30 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SC |
| Current Rating | -200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 6.2W |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -200mA |
| Collector Base Voltage (VCBO) | -40V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -400mV |
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