US6K2TR
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Краткое описание:
N-Channel JFET, 30V, 1.4A ID, 2-Element, SMD
Дополнительная информация
N-Channel Silicon FET, TUMT6 package, offering 1.4A continuous drain current and 30V drain-to-source breakdown voltage. Features include a maximum power dissipation of 1W, 270mΩ drain-to-source resistance, and 6ns turn-on delay. This surface-mount device is RoHS compliant and packaged on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 240mR |
| Package/Case | SMD/SMT |
| Current Rating | 1.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Input Capacitance | 70pF |
| Power Dissipation | 1W |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 1W |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 380MR |
| Drain to Source Breakdown Voltage | 30V |
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