VN10LP
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Краткое описание:
N-Channel JFET, 60V, 270mA, 5R, TO-92
Дополнительная информация
N-channel JFET transistor featuring 60V drain-source voltage (Vdss) and 270mA continuous drain current (ID). This silicon FET offers a maximum drain-source on-resistance (Rds On) of 5 Ohms and a threshold voltage of 2.5V. Designed for through-hole mounting, it comes in a TO-92 package with a 1.27mm lead pitch. Maximum power dissipation is 625mW, with operating temperatures ranging from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lead Pitch | 1.27mm |
| Rds On Max | 5R |
| Package/Case | TO-92-3 |
| Current Rating | 270mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 4000 |
| Input Capacitance | 60pF |
| Power Dissipation | 625mW |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 270mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
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