VT6T1T2R

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VT6T1T2R - Rohm
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Краткое описание: Dual PNP BJT Transistor 20V 0.2A 150mW VMT 6-Pin
Производитель Rohm
Статус производства Производится (ACTIVE)

Дополнительная информация

The VT6T1T2R is a dual PNP bipolar junction transistor from Rohm with a maximum collector-emitter voltage of 20V and a maximum DC collector current of 0.2A. It has a maximum power dissipation of 150mW and a minimum operating temperature of -55°C. The transistor is packaged in a VMT package with a maximum package length of 1.3mm and a maximum package width of 1.02mm. It is suitable for use in surface mount applications.
PCB 6
ECCN EAR99
PPAP No
Type PNP
EU RoHS Yes
Category Bipolar Small Signal
HTS Code 8541210075
Mounting Surface Mount
Cage Code S5518
Pin Count 6
Automotive No
Schedule B 8541210080
Package/Case VMT
AEC Qualified No
Configuration Dual
RoHS Versions 2011/65/EU, 2015/863
Package Material Plastic
Package Width (mm) 1.02(Max)
Package Height (mm) 0.6(Max)
Package Length (mm) 1.3(Max)
Radiation Hardening No
Minimum DC Current Gain 120@1mA@2V
Max Operating Temperature 150°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Number of Elements per Chip 2
Maximum DC Collector Current 0.2A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 350(Typ)MHz
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 20V