VT6Z2
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Краткое описание:
Dual NPN/PNP BJT Transistor, 50V 0.1A 150mW VMT Package
Дополнительная информация
The VT6Z2 is a dual NPN/PNP bipolar junction transistor from Rohm, packaged in a VMT surface mount package. It has a maximum collector-base voltage of 50V, maximum collector-emitter voltage of 50V, and a maximum DC collector current of 0.1A. The transistor has a maximum power dissipation of 150mW and is made from silicon material. It operates over a temperature range of -55°C to 150°C.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN|PNP |
| EU RoHS | Yes |
| Category | Bipolar Small Signal |
| HTS Code | 8541210075 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S5518 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541210080 |
| Package/Case | VMT |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Plastic |
| Package Width (mm) | 1.02(Max) |
| Package Height (mm) | 0.6(Max) |
| Package Length (mm) | 1.3(Max) |
| Radiation Hardening | No |
| Minimum DC Current Gain | 120@1mA@6V |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 2 |
| Maximum DC Collector Current | 0.1A |
| Maximum Emitter Base Voltage | 5V |
| Maximum Transition Frequency | 350(Typ)@NPN|300(Typ)@PNPMHz |
| Maximum Collector Base Voltage | 50V |
| Maximum Collector-Emitter Voltage | 50V |
