ZDT1048TA
Увеличить
Краткое описание:
NPN BJT Transistor, 5A I(C), 17.5V V(CE), 150MHz, 2-Element, SMD
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 5A continuous collector current, 17.5V collector-emitter breakdown voltage, and 150MHz transition frequency. This 8-pin SM-8 package offers a 2.75W power dissipation and operates from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.6mm |
| Length | 6.7mm |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Max Frequency | 150MHz |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 17.5V |
| Package Quantity | 1 |
| Power Dissipation | 2.75W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 17.5V |
| Max Collector Current | 5A |
| Max Power Dissipation | 2.75W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 5A |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 17.5V |
| Collector Emitter Breakdown Voltage | 17.5V |
| Collector Emitter Saturation Voltage | 300mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
