ZDT6702TA
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Краткое описание:
NPN/PNP BJT, 60V, 2A, 140MHz, 2-Element, SM-8
Дополнительная информация
Dual-element NPN and PNP silicon bipolar junction transistor for surface mount applications. Features a 60V collector-emitter breakdown voltage and 2A continuous collector current. Operates with a 140MHz transition frequency and 2.75W maximum power dissipation. Packaged in an 8-pin SM-8 (SOT-23-8) SMD/SMT package, tape and reel. Compliant with RoHS and REACH SVHC standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.6mm |
| Length | 6.7mm |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Max Frequency | 140MHz |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1.75A |
| Max Power Dissipation | 2.75W |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 10V |
| Continuous Collector Current | 1.75A |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1.28V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
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