ZDT749TA
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Краткое описание:
PNP BJT Transistor, 2A I(C), 25V V(BR)CEO, 160MHz f(T), SMD
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a continuous collector current of -2A and a collector-emitter breakdown voltage of 25V. Offers a maximum power dissipation of 2.75W and a transition frequency of 160MHz. Packaged in SM-8, 8-pin plastic/epoxy with tape and reel packaging. Operating temperature range from -55°C to 150°C, lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.6mm |
| Length | 6.7mm |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Current Rating | -6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -25V |
| Package Quantity | 1000 |
| Radiation Hardening | No |
| Transition Frequency | 160MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 2A |
| Max Power Dissipation | 2.75W |
| Gain Bandwidth Product | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -2A |
| Collector Base Voltage (VCBO) | -35V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -230mV |
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