ZDT751TA
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Краткое описание:
PNP BJT Transistor, 60V, 2A, 140MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor, 2-element configuration, designed for surface mount applications. Features a 60V collector-emitter breakdown voltage and a continuous collector current rating of -2A. Offers a maximum power dissipation of 2.75W and a transition frequency of 140MHz. Packaged in tape and reel, this lead-free and RoHS compliant component is housed in an 8-pin SOT-223 package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.6mm |
| Length | 6.7mm |
| Polarity | PNP |
| Frequency | 140MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Current Rating | -2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1000 |
| Power Dissipation | 2.75W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Power Dissipation | 2.75W |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -2A |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -280mV |
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