ZHB6718TA
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4-Element NPN/PNP BJT, 2.5A, 20V, 140MHz, SOT-223-8
Дополнительная информация
Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity, with a continuous collector current of 2.5A and a collector-emitter breakdown voltage of 20V. This 4-element silicon transistor offers a maximum power dissipation of 2W and a transition frequency of 140MHz. Packaged in a SOT-223-8 (SM-8) case, it operates within a temperature range of -55°C to 150°C and is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.6mm |
| Length | 6.7mm |
| Polarity | NPN, PNP |
| Frequency | 140MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223-8 |
| Max Frequency | 140MHz |
| Current Rating | 2.5A |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 2W |
| Number of Elements | 4 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2.5A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 2.5A |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 130mV |
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