ZHB6792TA

ZHB6792TA - Diodes
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Краткое описание: NPN/PNP BJT Transistor, 1A, 70V, 100MHz, SM-8

Дополнительная информация

Surface mount bipolar junction transistor (BJT) with NPN and PNP polarity, featuring a 1A continuous collector current and 70V collector-emitter breakdown voltage. This silicon transistor offers a 150MHz gain bandwidth product and a 100MHz transition frequency, with a maximum power dissipation of 2W. Packaged in an 8-pin SM-8 (SMD/SMT) case, it operates from -55°C to 150°C and is RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Width 3.7mm
Height 1.6mm
Length 6.7mm
Polarity NPN, PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SMD/SMT
Current Rating 1A
RoHS Compliant Yes
Package Quantity 1000
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 100MHz
Max Breakdown Voltage 70V
Max Collector Current 1A
Max Power Dissipation 2W
Gain Bandwidth Product 150MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 1A
Collector Base Voltage (VCBO) 70V
Collector-emitter Voltage-Max 750mV
Collector Emitter Breakdown Voltage 70V
Collector Emitter Saturation Voltage -500mV

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