ZTX1051A
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Краткое описание:
NPN BJT Transistor, 4A, 40V, 155MHz, TO-92
Дополнительная информация
NPN silicon bipolar junction transistor in a TO-92 E-LINE package. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 4A. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 155MHz. Operates across a temperature range of -55°C to 200°C with a maximum power dissipation of 1W. Through-hole mounting and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| hFE Min | 300 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 4000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 155MHz |
| Max Collector Current | 4A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 155MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 4A |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 210mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
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