ZTX1147A
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Краткое описание:
PNP BJT Transistor, 12V VCEO, -4A IC, 115MHz, TO-92
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -4A and a collector-emitter breakdown voltage of 12V. Operates with a transition frequency of 115MHz and a maximum power dissipation of 1W. Packaged in a TO-92 E-LINE package, suitable for through-hole mounting. Compliant with RoHS and REACH SVHC standards.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | PNP |
| Frequency | 115MHz |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | -4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -12V |
| Package Quantity | 4000 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 115MHz |
| Max Collector Current | 4A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 115MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -4A |
| Collector Base Voltage (VCBO) | 15V |
| Collector-emitter Voltage-Max | 235mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -175mV |
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