ZTX415
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Краткое описание:
NPN BJT Transistor, 100V VCEO, 500mA IC, 40MHz, TO-92
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications. Features a 100V collector-emitter breakdown voltage (VCEO) and 500mA continuous collector current (IC). Operates with a maximum power dissipation of 680mW and a transition frequency of 40MHz. Packaged in a TO-92 compatible, 3-pin through-hole configuration. Compliant with RoHS and REACH SVHC standards.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Frequency | 40MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 40MHz |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 4000 |
| Power Dissipation | 680mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 40MHz |
| Max Collector Current | 500mA |
| Max Power Dissipation | 680mW |
| Gain Bandwidth Product | 40MHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 260V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 500mV |
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