ZTX451
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NPN BJT Transistor, 60V VCEO, 1A IC, 150MHz, TO-92
Дополнительная информация
NPN bipolar junction transistor featuring a 60V collector-emitter breakdown voltage and 1A continuous collector current. This silicon transistor offers a 150MHz transition frequency and a 350mV collector-emitter saturation voltage. Housed in a TO-92 package, it supports through-hole mounting and operates within a temperature range of -55°C to 200°C. Maximum power dissipation is 1W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 150MHz |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 4000 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 1A |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 350mV |
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