ZTX453
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NPN BJT Transistor, 100V VCEO, 1A IC, 150MHz fT, TO-92
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) with a continuous collector current of 1A and a collector-emitter breakdown voltage of 100V. Features a maximum power dissipation of 1W and a transition frequency of 150MHz. Packaged in a TO-92 compatible E-LINE package, suitable for through-hole mounting. Operates across a wide temperature range from -55°C to 200°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 4000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 1A |
| Collector Base Voltage (VCBO) | 120V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 700mV |
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