ZTX553
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Краткое описание:
PNP BJT Transistor, 100V VCEO, 1A IC, TO-92
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 100V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -1A. Offers a -300mV Collector-Emitter Saturation Voltage and a 150MHz Gain Bandwidth Product. Operates across a temperature range of -55°C to 200°C with a maximum power dissipation of 1W. Through-hole mounting and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 4000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -1A |
| Collector Base Voltage (VCBO) | -120V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -300mV |
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