ZTX560
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Краткое описание:
PNP BJT Transistor, 500V, 150mA, 60MHz, Through Hole
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 500V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a 500V Collector Base Voltage (VCBO). Offers a continuous collector current of -150mA and a maximum power dissipation of 1W. Operates within a temperature range of -55°C to 150°C, with a transition frequency of 60MHz. Packaged in an E-LINE, 3-pin through-hole configuration. RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Current Rating | -150mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -500V |
| Package Quantity | 4000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 60MHz |
| Max Collector Current | 150mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 60MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -150mA |
| Collector Base Voltage (VCBO) | -500V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Saturation Voltage | -500mV |
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