ZTX653DCSM-JQR-A

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ZTX653DCSM-JQR-A - TT
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Краткое описание: NPN BJT 100V 2A 1000mW 6-Pin Ceramic SMT Transistor
Производитель TT
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V collector-emitter voltage, 2A maximum DC collector current, and 1000mW maximum power dissipation. This single-element transistor is constructed from Silicon and housed in a 6-pin Ceramic CLLCC-2 package with no leads. Operating temperature range is -55°C to 150°C, with a maximum transition frequency of 175MHz.
PCB 6
ECCN EAR99
PPAP No
Type NPN
Category Bipolar Power
HTS Code 8541290075
Material Si
Mounting Surface Mount
Cage Code 57027, 73138,U1395
Pin Count 6
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Package/Case CLLCC-2
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 1.27
Package Material Ceramic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 6.22
Package Family Name LLCC
Package Length (mm) 4.32
Radiation Hardening No
Minimum DC Current Gain 70@50mA@2V|100@500mA@2V|55@1A@2V|25@2A@2V
Max Operating Temperature 150°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -55°C
Number of Elements per Chip 2
Maximum DC Collector Current 2A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 175(Typ)MHz
Maximum Collector Base Voltage 120V
Maximum Collector-Emitter Voltage 100V