NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V collector-emitter voltage, 2A maximum DC collector current, and 1000mW maximum power dissipation. This single-element transistor is constructed from Silicon and housed in a 6-pin Ceramic CLLCC-2 package with no leads. Operating temperature range is -55°C to 150°C, with a maximum transition frequency of 175MHz.
| PCB |
6 |
| ECCN |
EAR99 |
| PPAP |
No |
| Type |
NPN |
| Category |
Bipolar Power |
| HTS Code |
8541290075 |
| Material |
Si |
| Mounting |
Surface Mount |
| Cage Code |
57027, 73138,U1395 |
| Pin Count |
6 |
| Automotive |
No |
| Lead Shape |
No Lead |
| Schedule B |
8541290080 |
| Package/Case |
CLLCC-2 |
| AEC Qualified |
No |
| Configuration |
Single |
| RoHS Versions |
2002/95/EC |
| Pin Pitch (mm) |
1.27 |
| Package Material |
Ceramic |
| Basic Package Type |
Non-Lead-Frame SMT |
| Package Width (mm) |
6.22 |
| Package Family Name |
LLCC |
| Package Length (mm) |
4.32 |
| Radiation Hardening |
No |
| Minimum DC Current Gain |
70@50mA@2V|100@500mA@2V|55@1A@2V|25@2A@2V |
| Max Operating Temperature |
150°C |
| Maximum Power Dissipation |
1000mW |
| Min Operating Temperature |
-55°C |
| Number of Elements per Chip |
2 |
| Maximum DC Collector Current |
2A |
| Maximum Emitter Base Voltage |
5V |
| Maximum Transition Frequency |
175(Typ)MHz |
| Maximum Collector Base Voltage |
120V |
| Maximum Collector-Emitter Voltage |
100V |