ZTX655
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NPN BJT Transistor, 150V, 1A, TO-92
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a 1A Continuous Collector Current (I(C)). Operates with a 5V Emitter-Base Voltage (VEBO) and offers a 30MHz Gain Bandwidth Product. Housed in a TO-92 package, this through-hole component supports a maximum power dissipation of 1W and operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Lead Free | Contains Lead |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 150V |
| Package Quantity | 4000 |
| Transition Frequency | 30MHz |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 1A |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 500mV |
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