ZTX689B
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Краткое описание:
NPN BJT Transistor, 3A I(C), 20V V(CEO), TO-92
Дополнительная информация
NPN Silicon Bipolar Junction Transistor featuring a 3A continuous collector current and 20V collector-emitter breakdown voltage. This through-hole component offers a minimum DC current gain (hFE) of 400 and a transition frequency of 150MHz. Housed in a TO-92 E-LINE package, it operates within a temperature range of -55°C to 200°C with a maximum power dissipation of 1W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| hFE Min | 400 |
| Polarity | NPN |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
| Package Quantity | 4000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Collector Current | 3A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 3A |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 500mV |
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