ZTX694BSTOB
Увеличить
Краткое описание:
NPN BJT Transistor, 120V, 500mA, TO-92, 130MHz
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 120V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a 5V emitter-base voltage and exhibits a 130MHz gain bandwidth product. Housed in a TO-92 compatible E-Line package, this through-hole component supports a maximum power dissipation of 1W and operates from -55°C to 150°C.
| RoHS | Not Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-92 |
| Current Rating | 500mA |
| RoHS Compliant | No |
| DC Rated Voltage | 120V |
| Package Quantity | 2000 |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 130MHz |
| Max Collector Current | 500mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 120V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 500mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
