ZTX694BSTZ

ZTX694BSTZ - Diodes
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Краткое описание: NPN BJT Transistor, 120V, 500mA, 130MHz, TO-92

Дополнительная информация

NPN silicon bipolar junction transistor featuring a 120V collector-emitter breakdown voltage and 500mA continuous collector current. This through-hole component offers a 130MHz transition frequency and a maximum power dissipation of 1W. Packaged in a TO-92 compatible E-LINE package, it operates across a wide temperature range from -55°C to 150°C. The device is lead-free, RoHS compliant, and REACH SVHC compliant.
RoHS Compliant
Mount Through Hole
Width 2.41mm
Height 4.01mm
Length 4.77mm
Weight 0.016oz
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case TO-92
Current Rating 500mA
RoHS Compliant Yes
DC Rated Voltage 120V
Package Quantity 2000
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 130MHz
Max Collector Current 500mA
Max Power Dissipation 1W
Gain Bandwidth Product 130MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 500mA
Collector Base Voltage (VCBO) 120V
Collector-emitter Voltage-Max 500mV
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 500mV

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